Boosted channel programming of memory

ABSTRACT

Methods of operating a memory include boosting a channel voltage of a memory cell selected for programming to a particular voltage level for a particular programming pulse, boosting the channel voltage of the memory cell selected for programming to a second voltage level, greater than the particular voltage level, for a subsequent programming pulse, and boosting the channel voltage of the memory cell selected for programming to a third voltage level, greater than the second voltage level, for a next subsequent programming pulse.

RELATED APPLICATION

This Application is a Divisional of U.S. application Ser. No.15/096,439, titled “BOOSTED CHANNEL PROGRAMMING OF MEMORY,” filed Apr.12, 2016, (allowed) which is commonly assigned and incorporated hereinby reference.

TECHNICAL FIELD

The present disclosure relates generally to memory and, in particular,in one or more embodiments, the present disclosure relates to boostedchannel programming of memory.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuit devices in computers or other electronic devices.There are many different types of memory including random-access memory(RAM), read only memory (ROM), dynamic random access memory (DRAM),synchronous dynamic random access memory (SDRAM), and flash memory.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Changes in threshold voltage (Vt) of the memory cells, throughprogramming (which is often referred to as writing) of charge storagestructures (e.g., floating gates or charge traps) or other physicalphenomena (e.g., phase change or polarization), determine the data state(e.g., data value) of each memory cell. Common uses for flash memoryinclude personal computers, personal digital assistants (PDAs), digitalcameras, digital media players, cellular telephones, solid state drivesand removable memory modules, and the uses are growing.

Memory cells may be configured to operate as what are known in the artas single-level memory cells (SLC) or multi-level memory cells (MLC).SLC and MLC memory cells assign a data state (e.g., representing arespective value of one or more bits) to a specific range of thresholdvoltages (Vt) stored on the memory cells. Single level memory cellspermit the storage of a single binary digit (e.g., bit) of data on eachmemory cell. Meanwhile, MLC technology permits the storage of more thanone binary digit per memory cell (e.g., two bits, three bits, four bits,etc.), depending on the quantity of threshold voltage ranges assigned tothe memory cell and the stability of the assigned threshold voltageranges during the lifetime operation of the memory cell. By way ofexample, one bit (e.g., 1 or 0) may be represented by two thresholdvoltage ranges, two bits by four ranges, three bits by eight ranges,etc. Non-binary numbers of threshold voltage ranges are also known,e.g., using two memory cells configured to operate with three datastates to collectively store three bits of information, or 1.5 bits permemory cell. As a single memory cell is used to store higher levels ofdata, differentiating data states can become more difficult.

Programming in memories is typically accomplished by applying aplurality of programming pulses, separated by verify pulses, to programeach memory cell of a selected group of memory cells to a respectiveintended data state (which may be an interim or final data state). Withsuch a scheme, the programming pulses are applied to access lines, suchas those typically referred to as word lines, for selected memory cells.After each programming pulse, one or more verify pulses are used toverify the programming of the selected memory cells. Current programmingtypically uses many programming pulses in an incremental step pulseprogramming scheme, where each programming pulse is a single pulse thatmoves the memory cell threshold voltage by some amount. Programmingoperations are generally power intensive operations of a memory device.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art foralternative methods of programming memory, and apparatus to perform suchmethods.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of a memory in communication with aprocessor as part of an electronic system, according to an embodiment.

FIG. 2A is a schematic of a portion of an array of memory cells as couldbe used in a memory of the type described with reference to FIG. 1.

FIG. 2B is another schematic of a portion of an array of memory cells ascould be used in a memory of the type described with reference to FIG.1.

FIG. 3 illustrates an example of threshold voltage ranges for apopulation of multi-level memory cells.

FIG. 4 illustrates a timing diagram for a programming pulse of a typicalBCP programming operation for a four-level memory device.

FIG. 5 illustrates a timing diagram for a programming pulse of a BCPprogramming operation for a four-level memory device in accordance withan embodiment.

FIG. 6 is a flowchart of a method of operating a memory in accordancewith an embodiment.

FIG. 7 is a flowchart of a method of operating a memory in accordancewith an embodiment.

FIG. 8 is a flowchart of a method of operating a memory in accordancewith an embodiment.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof, and in which is shown, byway of illustration, specific embodiments. In the drawings, likereference numerals describe substantially similar components throughoutthe several views. Other embodiments may be utilized and structural,logical and electrical changes may be made without departing from thescope of the present disclosure. The following detailed description is,therefore, not to be taken in a limiting sense.

FIG. 1 is a simplified block diagram of a first apparatus, in the formof a memory (e.g., memory device) 100, in communication with a secondapparatus, in the form of a processor 130, as part of a third apparatus,in the form of an electronic system, according to an embodiment. Someexamples of electronic systems include personal computers, personaldigital assistants (PDAs), digital cameras, digital media players,digital recorders, games, appliances, vehicles, wireless devices,cellular telephones and the like. The processor 130, e.g., a controllerexternal to the memory device 100, may be a memory controller or otherexternal host device.

Memory device 100 includes an array of memory cells 104 logicallyarranged in rows and columns. Memory cells of a logical row aretypically connected to the same access line (commonly referred to as aword line) while memory cells of a logical column are typicallyselectively connected to the same data line (commonly referred to as abit line). A single access line may be associated with more than onelogical row of memory cells and a single data line may be associatedwith more than one logical column. Memory cells (not shown in FIG. 1) ofat least a portion of array of memory cells 104 are capable of beingprogrammed to one of at least three data states.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals. Address signals are received anddecoded to access the array of memory cells 104. Memory device 100 alsoincludes input/output (I/O) control circuitry 112 to manage input ofcommands, addresses and data to the memory device 100 as well as outputof data and status information from the memory device 100. An addressregister 114 is in communication with I/O control circuitry 112 and rowdecode circuitry 108 and column decode circuitry 110 to latch theaddress signals prior to decoding. A command register 124 is incommunication with I/O control circuitry 112 and control logic 116 tolatch incoming commands.

An internal controller (e.g., control logic 116) controls access to thearray of memory cells 104 in response to the commands and generatesstatus information for the external processor 130, i.e., control logic116 is configured to perform access operations (e.g., programmingoperations) in accordance with embodiments described herein. The controllogic 116 is in communication with row decode circuitry 108 and columndecode circuitry 110 to control the row decode circuitry 108 and columndecode circuitry 110 in response to the addresses.

Control logic 116 is also in communication with a cache register 118 anddata register 120. Cache register 118 latches data, either incoming oroutgoing, as directed by control logic 116 to temporarily store datawhile the array of memory cells 104 is busy writing or reading,respectively, other data. During a programming operation (e.g., oftenreferred to as a write operation), data is passed from the cacheregister 118 to the data register 120 for transfer to the array ofmemory cells 104; then new data is latched in the cache register 118from the I/O control circuitry 112. During a read operation, data ispassed from the cache register 118 to the I/O control circuitry 112 foroutput to the external processor 130; then new data is passed from thedata register 120 to the cache register 118. A status register 122 is incommunication with I/O control circuitry 112 and control logic 116 tolatch the status information for output to the processor 130.

Memory device 100 receives control signals at control logic 116 fromprocessor 130 over a control link 132. The control signals may includeat least a chip enable CE#, a command latch enable CLE, an address latchenable ALE, and a write enable WE#. Additional control signals (notshown) may be further received over control link 132 depending upon thenature of the memory device 100. Memory device 100 receives commandsignals (which represent commands), address signals (which representaddresses), and data signals (which represent data) from processor 130over a multiplexed input/output (I/O) bus 134 and outputs data toprocessor 130 over I/O bus 134.

For example, the commands are received over input/output (I/O) pins[7:0] of I/O bus 134 at I/O control circuitry 112 and are written intocommand register 124. The addresses are received over input/output (I/O)pins [7:0] of bus 134 at I/O control circuitry 112 and are written intoaddress register 114. The data are received over input/output (I/O) pins[7:0] for an 8-bit device or input/output (I/O) pins [15:0] for a 16-bitdevice at I/O control circuitry 112 and are written into cache register118. The data are subsequently written into data register 120 forprogramming the array of memory cells 104. For another embodiment, cacheregister 118 may be omitted, and the data are written directly into dataregister 120. Data are also output over input/output (I/O) pins [7:0]for an 8-bit device or input/output (I/O) pins [15:0] for a 16-bitdevice.

It will be appreciated by those skilled in the art that additionalcircuitry and signals can be provided, and that the memory device 100 ofFIG. 1 has been simplified. It should be recognized that thefunctionality of the various block components described with referenceto FIG. 1 may not necessarily be segregated to distinct components orcomponent portions of an integrated circuit device. For example, asingle component or component portion of an integrated circuit devicecould be adapted to perform the functionality of more than one blockcomponent of FIG. 1. Alternatively, one or more components or componentportions of an integrated circuit device could be combined to performthe functionality of a single block component of FIG. 1.

Additionally, while specific I/O pins are described in accordance withpopular conventions for receipt and output of the various signals, it isnoted that other combinations or numbers of I/O pins may be used in thevarious embodiments.

FIG. 2A is a schematic of a NAND memory array 200A, e.g., as a portionof array of memory cells 104. Memory array 200A includes access lines,such as word lines 202 ₀ to 202 _(N), and data lines, such as bit lines204 ₀ to 204 _(M). The word lines 202 may be connected to global accesslines (e.g., global word lines), not shown in FIG. 2A, in a many-to-onerelationship. For some embodiments, memory array 200A may be formed overa semiconductor that, for example, may be conductively doped to have aconductivity type, such as a p-type conductivity, e.g., to form ap-well, or an n-type conductivity, e.g., to form an n-well.

Memory array 200A might be arranged in rows (each corresponding to aword line 202) and columns (each corresponding to a bit line 204). Eachcolumn may include a string of series-connected memory cells, such asone of NAND strings 206 ₀ to 206 _(M). Each NAND string 206 might beconnected (e.g., selectively connected) to a common source 216 and mightinclude memory cells 208 ₀ to 208 _(N). The memory cells 208 representnon-volatile memory cells for storage of data. The memory cells 208 ofeach NAND string 206 might be connected in series between a selecttransistor 210 (e.g., a field-effect transistor), such as one of theselect transistors 210 ₀ to 210 _(M) (e.g., that may be source selecttransistors, commonly referred to as select gate source), and a selecttransistor 212 (e.g., a field-effect transistor), such as one of theselect transistors 212 ₀ to 212 _(M) (e.g., that may be drain selecttransistors, commonly referred to as select gate drain). Selecttransistors 210 ₀ to 210 _(M) might be commonly connected to a selectline 214, such as a source select line, and select transistors 212 ₀ to212 _(M) might be commonly connected to a select line 215, such as adrain select line.

A source of each select transistor 210 might be connected to commonsource 216. The drain of each select transistor 210 might be connectedto a memory cell 208 ₀ of the corresponding NAND string 206. Forexample, the drain of select transistor 210 ₀ might be connected tomemory cell 208 ₀ of the corresponding NAND string 206 ₀. Therefore,each select transistor 210 might be configured to selectively connect acorresponding NAND string 206 to common source 216. A control gate ofeach select transistor 210 might be connected to select line 214.

The drain of each select transistor 212 might be connected to the bitline 204 for the corresponding NAND string 206. For example, the drainof select transistor 212 ₀ might be connected to the bit line 204 ₀ forthe corresponding NAND string 206 ₀. The source of each selecttransistor 212 might be connected to a memory cell 208 _(N) of thecorresponding NAND string 206. For example, the source of selecttransistor 212 ₀ might be connected to memory cell 208 _(N) of thecorresponding NAND string 206 ₀. Therefore, each select transistor 212might be configured to selectively connect a corresponding NAND string206 to a corresponding bit line 204. A control gate of each selecttransistor 212 might be connected to select line 215.

The memory array in FIG. 2A might be a quasi-two-dimensional memoryarray and might have a generally planar structure, e.g., where thecommon source 216, NAND strings 206 and bit lines 204 extend insubstantially parallel planes. Alternatively, the memory array in FIG.2A might be a three-dimensional memory array, e.g., where NAND strings206 may extend substantially perpendicular to a plane containing thecommon source 216 and to a plane containing the bit lines 204 that maybe substantially parallel to the plane containing the common source 216.

Typical construction of memory cells 208 includes a data-storagestructure 234 (e.g., a floating gate, charge trap, etc.) that candetermine a data state of the memory cell (e.g., through changes inthreshold voltage), and a control gate 236, as shown in FIG. 2A. In somecases, memory cells 208 may further have a defined source 230 and adefined drain 232. Memory cells 208 have their control gates 236connected to (and in some cases form) a word line 202.

A column of the memory cells 208 is a NAND string 206 or a plurality ofNAND strings 206 selectively connected to a given bit line 204. A row ofthe memory cells 208 may be memory cells 208 commonly connected to agiven word line 202. A row of memory cells 208 can, but need not includeall memory cells 208 commonly connected to a given word line 202. Rowsof memory cells 208 may often be divided into one or more groups ofphysical pages of memory cells 208, and physical pages of memory cells208 often include every other memory cell 208 commonly connected to agiven word line 202. For example, memory cells 208 commonly connected toword line 202 _(N) and selectively connected to even bit lines 204(e.g., bit lines 204 ₀, 204 ₂, 204 ₄, etc.) may be one physical page ofmemory cells 208 (e.g., even memory cells) while memory cells 208commonly connected to word line 202 _(N) and selectively connected toodd bit lines 204 (e.g., bit lines 204 ₁, 204 ₃, 204 ₅, etc.) may beanother physical page of memory cells 208 (e.g., odd memory cells).Although bit lines 204 ₃-204 ₅ are not expressly depicted in FIG. 2A, itis apparent from the figure that the bit lines 204 of the array ofmemory cells 200A may be numbered consecutively from bit line 204 ₀ tobit line 204 _(M). Other groupings of memory cells 208 commonlyconnected to a given word line 202 may also define a physical page ofmemory cells 208. For certain memory devices, all memory cells commonlyconnected to a given word line might be deemed a physical page. Theportion of a physical page (which, in some embodiments, could still bethe entire row) that is read during a single read operation orprogrammed during a programming operation (e.g., an upper or lower pagememory cells) might be deemed a logical page. A block of memory cellsmay include those memory cells that are configured to be erasedtogether, such as all memory cells connected to word lines 202 ₀-202_(N) (e.g., all NAND strings 206 sharing common word lines 202).

FIG. 2B is another schematic of a portion of an array of memory cells ascould be used in a memory of the type described with reference toFIG. 1. FIG. 2B provides additional detail of one example of athree-dimensional NAND memory array structure. The three-dimensionalNAND memory array 200B may incorporate vertical structures which mayinclude semiconductor pillars where a portion of a pillar may act as achannel region of the memory cells of NAND strings 206. The NAND strings206 may be each selectively connected to a bit line 204 ₀-204 _(M) by aselect transistor 212 (e.g., that may be drain select transistors,commonly referred to as select gate drain) and to a common source 216 bya select transistor 210 (e.g., that may be source select transistors,commonly referred to as select gate source). Multiple NAND strings 206might be selectively connected to the same bit line 204. Subsets of NANDstrings 206 can be connected to their respective bit lines 204 bybiasing the select lines 215 ₀-215 _(L) to selectively activateparticular select transistors 212 each between a NAND string 206 and abit line 204. The select transistors 210 can be activated by biasing theselect line 214.

Each word line 202 may be connected to multiple rows of memory cells ofthe memory array 200B. Rows of memory cells that are commonly connectedto each other by a particular word line 202 may collectively be referredto as tiers. Structures of memory cells may be similar in components tothose described with reference to FIG. 2A, although they may possess adifferent geometry.

Although the examples of FIGS. 2A and 2B are discussed in conjunctionwith NAND flash, the embodiments and concepts described herein are notlimited to a particular array architecture or structure, and can includeother structures (e.g., SONOS, phase change, ferroelectric, etc.) andother architectures (e.g., AND arrays, NOR arrays, etc.).

FIG. 3 illustrates an example of threshold voltage ranges for apopulation of a four-level (e.g., two bits per memory cell) MLC memorycells. For example, such a memory cell might be programmed to athreshold voltage (Vt) that falls within one of four different thresholdvoltage ranges 301-304, each being used to represent a data statecorresponding to a bit pattern comprised of two bits. The thresholdvoltage range 301 typically has a greater width than the remainingthreshold voltage ranges 302-304 as memory cells are generally allplaced in the data state corresponding to the threshold voltage range301, e.g., in response to an erase operation, then subsets of thosememory cells are subsequently programmed to have threshold voltages inone of the threshold voltage ranges 302-304. As programming operationsare generally more incrementally controlled than erase operations, thesethreshold voltage ranges 302-304 may tend to have tighter distributions.

The threshold voltage ranges 302-304 might each have a width 305, e.g.,a width of 750 mV. In addition, a dead space 306 (e.g., sometimesreferred to as a margin, and might be approximately 500 mV or greater)is typically maintained between adjacent threshold voltage ranges301-304 to keep the threshold voltage ranges from overlapping. As anexample, if the threshold voltage of a memory cell is within the firstof the four threshold voltage ranges 301, the memory cell in this caseis storing a logical ‘11’ or level 0 (L0) data state and is typicallyreferred to as the erased state of the memory cell. If the thresholdvoltage is within the second of the four threshold voltage ranges 302,the memory cell in this case is storing a logical ‘10’ or level 1 (L1)data state. A threshold voltage in the third threshold voltage range 303would indicate that the memory cell in this case is storing a logical‘00’ or level 2 (L2) data state. Finally, a threshold voltage residingin the fourth threshold voltage range 304 indicates that a logical ‘01’or level 3 (L3) data state is stored in the memory cell.

Schemes for programming memory cells to more than two data statesinclude boosted channel programming (BCP), where some memory cells mightbe enabled for programming, some memory cells might be partially enabledfor (e.g., partially inhibited from) programming, and some memory cellsmight be inhibited (e.g., fully inhibited) from programming. In effect,BCP utilizes the concept of program disturb to program memory cells tointermediate intended data states (e.g., data states between an upperdata state and a lower data state) in a multi-level memory, such asdescribed with reference to FIG. 3, while other selected memory cellsare programmed to an upper (e.g., a highest) intended data state byboosting channel voltages of memory cells corresponding to theintermediate intended data states to slow, but not fully inhibit,programming of those memory cells.

A timing diagram for a programming pulse of a typical BCP programmingoperation for a four-level (e.g., two bits per memory cell) memorydevice is depicted in FIG. 4. The process will be described withreference to an array architecture of the types depicted in FIG. 2A or2B and with reference to data states such as depicted in FIG. 3. Theprocess will generally refer to a selected access line (e.g., selectedword line) that is connected to one or more memory cells selected forprogramming and an unselected access line (e.g., unselected word line)that is connected to one or more memory cells not selected forprogramming. Voltage levels applied to the selected access line (WL sel)are represented by trace 412 while voltage levels applied to theunselected access line (WL unsel) are represented by trace 414. Althoughonly one unselected access line is discussed with reference to FIG. 4,each unselected access line of a NAND string 206 (e.g., each access line202 of the NAND string 206 other than the selected access line 202) mayreceive the same voltage levels, although other schemes may also beused.

The process of FIG. 4 will also generally refer to selected data lines(e.g., selected bit lines) each connected to a memory cell selected forprogramming to one of the L1, L2 or L3 data states, and unselected datalines (e.g., unselected bit lines) that are selectively connected tomemory cells connected to the selected access line that are either toremain in the L0 data state or have already reached their intended L1,L2 or L3 data state. Voltage levels applied to the selected data lines(BL L1, BL L2 and BL L3) are represented by traces 404, 406 and 408,respectively, while voltage levels applied to the unselected data line(BL unsel) are represented by trace 402. The voltage levels applied tothe select gate drain (SGD) are represented by trace 410. The referencenumerals of the traces will be used also to refer to the node to whichits voltage levels are applied.

At time t0, the voltage level applied to BL unsel 402 is raised to aninhibit voltage (e.g., Vcc). In conjunction, SGD 410 is raised to avoltage level sufficient to activate the corresponding select gates topass the voltage level of BL unsel 402 to the channels of thecorresponding NAND strings connected to the selected access line WL sel412. SGD 410 is subsequently (e.g., before time t1) reduced to a voltagelevel sufficient to activate select gates connected to bit lines towhich a reference voltage (e.g., Vss or ground) is applied and todeactivate select gates connected to bit lines to which the inhibitvoltage is applied. Time t1 occurs after BL unsel 402 is allowed toreturn to the inhibit voltage. The voltage level applied to BL L3 408might remain at the reference voltage through the various stages of theprogramming pulse.

At time t1, the voltage level applied to both WL sel 412 and WL unsel414 is raised to a level 416, boosting the channel voltage (Vch) of thememory cells connected to the selected access line that are to remain atthe L0 data state or have already reached their intended L1, L2 or L3data state after a prior programming pulse. The voltage level increase(e.g., step) to level 416 may be referred to as ΔVpass_L0-L1. At time t2(e.g., after WL sel 412 and WL unsel 414 have reached the level 416), BLL1 404 is raised to the inhibit voltage.

At time t3 (e.g., after BL L1 404 has reached the inhibit voltage), thevoltage level applied to both WL sel 412 and WL unsel 414 is raised to alevel 418, further boosting the channel voltage (Vch) of the memorycells that are to remain at the L0 data state or have already reachedtheir intended L1, L2 or L3 data state after a prior programming pulse,and boosting the channel voltage (Vch) of the memory cells that are tobe programmed to the L1 data state. The voltage level increase (e.g.,step) to level 418 from level 416 may be referred to as ΔVpass_L1-L2. Attime t4 (e.g., after WL sel 412 and WL unsel 414 have reached the level418), BL L2 406 is raised to the inhibit voltage.

At time t5 (e.g., after BL L2 406 has reached the inhibit voltage), thevoltage level applied to both WL sel 412 and WL unsel 414 is raised to alevel 420, further boosting the channel voltage (Vch) of the memorycells that are to remain at the L0 data state or have already reachedtheir intended L1, L2 or L3 data state after a prior programming pulse,further boosting the channel voltage (Vch) of the memory cells that areto be programmed to the L1 data state, and boosting the channel voltage(Vch) of the memory cells that are to be programmed to the L2 datastate. The voltage level increase (e.g., step) to level 420 from level418 may be referred to as ΔVpass_L2. At time t6 (e.g., after WL sel 412and WL unsel 414 have reached the level 420), the voltage level appliedto WL sel 412 is increased to the program voltage (Vpgm) while thevoltage level applied to WL unsel 414 remains at the final pass voltage(Vpass) level 420. After WL sel 412 is held at the program voltage(Vpgm), e.g., for a time sufficient to produce an increase in thresholdvoltage of memory cells connected to the selected access line andselectively connected to data lines corresponding to BL L1 404, BL L2406 and BL L3 408, the various nodes might be returned to some restingvoltage level, e.g., the reference voltage.

Such BCP programming operations repeat this programming pulse andcorresponding boosting until all memory cells connected to the selectedaccess line and selected for programming to one of the L1, L2 or L3 datastates have reached their intended data state, or a failure is declared.The levels 416, 418 and 420 to which the pass voltage (Vpass) is raisedare chosen to boost the channel voltages of memory cells to beprogrammed to the L1 and L2 data states to voltages appropriate to allowtheir programming using program disturb at the same time memory cells tobe programmed to the L3 data state are normally programmed. For example,consider where a target threshold voltage (e.g., a threshold voltagelevel for verification) of a memory cell programmed to the L3 data stateis PV3, a target threshold voltage of a memory cell programmed to the L2data state is PV2, and a target threshold voltage of a memory cellprogrammed to the L1 data state is PV1. In such a case, ΔVpass_L2 foreach programming pulse might be PV3-PV2 while ΔVpass_L1-L2 for eachprogramming pulse might be PV2-PV1, such that the channel voltage (Vch)of memory cells selected for programming to the L2 data state might beraised by a voltage level corresponding to (e.g., equal to) PV3-PV2while the channel voltage (Vch) of memory cells selected for programmingto the L1 data state might be raised by a voltage level corresponding to(e.g., equal to) PV3-PV1. Memory cells not selected for programming(e.g., those memory cells connected to the selected access line andselectively connected to unselected data lines) might have their channelvoltages (Vch) raised to a level intended to inhibit those memory cellsfrom increasing their threshold voltages in response to the programmingpulse having the program voltage (Vpgm).

Table 1 provides examples for various voltage levels used in, andresulting from, the BCP programming operation described with referenceto FIG. 4. The example of Table 1 describes seven successive andincreasing programming pulses, each programming pulse reaching a programvoltage that is 0.5V higher than the program voltage of a preceding(e.g., immediately preceding) programming pulse. For each programmingpulse, voltage levels for ΔVpass_L1-L2 and ΔVpass_L2 are the same at2.0V, resulting in boosted channel voltages for memory cells to beprogrammed to the L1, L2 and L3 data states of 4.0V, 2.0V and 0V,respectively. As a result, the effective gate step, or the increase inthe voltage level applied across the corresponding memory cells from oneprogramming pulse to the next, is the same at 0.5V for each programmeddata state.

TABLE 1 Eff Eff Eff Gate Gate Gate Pulse ΔVpass ΔVpass Vch Vch Vch StepStep Step # Vpgm L1-L2 L2 L1 L2 L3 L1 L2 L3 1 17.0 2.0 2.0 4.0 2.0 0 217.5 2.0 2.0 4.0 2.0 0 0.5 0.5 0.5 3 18.0 2.0 2.0 4.0 2.0 0 0.5 0.5 0.54 18.5 2.0 2.0 4.0 2.0 0 0.5 0.5 0.5 5 19.0 2.0 2.0 4.0 2.0 0 0.5 0.50.5 6 19.5 2.0 2.0 4.0 2.0 0 0.5 0.5 0.5 7 20.0 2.0 2.0 4.0 2.0 0 0.50.5 0.5

Various embodiments facilitate improvements in read window budget (RWB)over a corresponding traditional BCP programming operation. The RWB canbe generally thought of as the collective dead spaces 306 between eachof the adjacent data states. Improving RWB can facilitate lessproblematic differentiation of data states, which may lead to areduction in read errors. By reducing the effective gate step for anintermediate data state, its corresponding range of threshold voltagesmight be narrowed relative to the range of threshold voltagescorresponding to the upper data state, thus increasing the RWB withouthindering programming of memory cells to the upper data state.

A timing diagram for a programming pulse of a BCP programming operationfor a four-level (e.g., two bits per memory cell) memory device inaccordance with an embodiment is depicted in FIG. 5. The process will bedescribed with reference to an array architecture of the types depictedin FIG. 2A or 2B and with reference to data states such as depicted inFIG. 3. The process will generally refer to a selected access line(e.g., selected word line) that is connected to one or more memory cellsselected for programming during a particular programming operation andan unselected access line (e.g., unselected word line) that is connectedto one or more memory cells not selected for programming during theparticular programming operation. Voltage levels applied to the selectedaccess line (WL sel) are represented by trace 512 while voltage levelsapplied to the unselected access line (WL unsel) are represented bytrace 514. Although only one unselected access line is discussed withreference to FIG. 5, each unselected access line of a NAND string 206(e.g., each access line 202 of the NAND string 206 other than theselected access line 202) may receive the same voltage levels. Otherschemes may also be used, such as where unselected access lines betweenthe selected access line and a selected data line have voltage levelssufficient to connect the channel of the selected memory cell to theselected data line while the selected data line is at the referencevoltage and connected to the NAND string containing that memory cell.

The process of FIG. 5 will also generally refer to selected data lines(e.g., selected bit lines) each connected to a memory cell selected forprogramming to one of the L1, L2 or L3 data states, and unselected datalines (e.g., unselected bit lines) that are selectively connected tomemory cells connected to the selected access line that are either toremain in the L0 data state or have already reached their intended L1,L2 or L3 data state. Voltage levels applied to the selected data lines(BL L1, BL L2 and BL L3) are represented by traces 504, 506 and 508,respectively, while voltage levels applied to the unselected data line(BL unsel) are represented by trace 502. The voltage levels applied tothe select gate drain (SGD) are represented by trace 510. The referencenumerals of the traces will be used also to refer to the node to whichits voltage levels are applied.

At time t0, the voltage level applied to BL unsel 502 is raised to aninhibit voltage (e.g., Vcc). In conjunction, SGD 510 is raised to avoltage level sufficient to activate the corresponding select gates topass the voltage level of BL unsel 502 to the channels of thecorresponding NAND strings connected to the selected access line WL sel512. SGD 510 is subsequently (e.g., before time t1) reduced to a voltagelevel sufficient to activate select gates connected to bit lines towhich a reference voltage (e.g., Vss or ground) is applied and todeactivate select gates connected to bit lines to which the inhibitvoltage is applied. Time t1 occurs after BL unsel 502 is allowed toreturn to the inhibit voltage. The voltage level applied to BL L3 508might remain at the reference voltage through the various stages of theprogramming pulse.

At time t1, the voltage level applied to both WL sel 512 and WL unsel514 is raised to a level 516, boosting the channel voltage (Vch) of thememory cells connected to the selected access line that are to remain atthe L0 data state or have already reached their intended L1, L2 or L3data state after a prior programming pulse. The voltage level increase(e.g., step) to level 516 may be referred to as ΔVpass_L0-L1. At time t2(e.g., after WL sel 512 and WL unsel 514 have reached the level 516), BLL1 504 is raised to the inhibit voltage.

At time t3 (e.g., after BL L1 504 has reached the inhibit voltage), thevoltage level applied to both WL sel 512 and WL unsel 514 is raised to alevel 518, further boosting the channel voltage (Vch) of the memorycells that are to remain at the L0 data state or have already reachedtheir intended L1, L2 or L3 data state after a prior programming pulse,and boosting the channel voltage (Vch) of the memory cells that are tobe programmed to the L1 data state. The voltage level increase (e.g.,step) to level 518 from level 516 may be referred to as ΔVpass_L1-L2. Attime t4 (e.g., after WL sel 512 and WL unsel 514 have reached the level518), BL L2 506 is raised to the inhibit voltage.

At time t5 (e.g., after BL L2 506 has reached the inhibit voltage), thevoltage level applied to both WL sel 512 and WL unsel 514 is raised to alevel 520, further boosting the channel voltage (Vch) of the memorycells that are to remain at the L0 data state or have already reachedtheir intended L1, L2 or L3 data state after a prior programming pulse,further boosting the channel voltage (Vch) of the memory cells that areto be programmed to the L1 data state, and boosting the channel voltage(Vch) of the memory cells that are to be programmed to the L2 datastate. The voltage level increase (e.g., step) to level 520 from level518 may be referred to as ΔVpass_L2. At time t6 (e.g., after WL sel 512and WL unsel 514 have reached the level 520), the voltage level appliedto WL sel 512 is increased to the program voltage (Vpgm) while thevoltage level applied to WL unsel 514 remains at the final pass voltage(Vpass) level 520. After WL sel 512 is held at the program voltage(Vpgm), e.g., for a time sufficient to produce an increase in thresholdvoltage of memory cells connected to the selected access line andselectively connected to data lines corresponding to BL L1 504, BL L2506 and BL L3 508, the various nodes might be returned to some restingvoltage level, e.g., the reference voltage.

The programming operation may repeat programming pulses andcorresponding boosting until all memory cells connected to the selectedaccess line and selected for programming to one of the L1, L2 or L3 datastates have reached their intended data state, or a failure is declared.As with traditional BCP programming, the levels 516, 518 and 520 towhich the pass voltage (Vpass) is raised on a programming pulse (e.g.,an initial programming pulse) may be chosen to boost the channelvoltages of memory cells to be programmed to the L1 and L2 data statesto voltages appropriate to allow their programming using program disturbat the same time memory cells to be programmed to the L3 data state arenormally programmed. As an example, initial values of ΔVpass_L1-L2and/or ΔVpass_L2 might be chosen using the same criteria as traditionalBCP programming. Similarly, memory cells not selected for programming(e.g., those memory cells connected to the selected access line andselectively connected to unselected data lines) might have their channelvoltages (Vch) raised to a level intended to inhibit those memory cellsfrom increasing their threshold voltages in response to the programmingpulse having the program voltage (Vpgm).

In contrast to traditional BCP programming, a subsequent programmingpulse in accordance with an embodiment may use different values ofΔVpass_L1-L2 and/or ΔVpass_L2 chosen such that the effective gate step,or the increase in the voltage level applied across (e.g., from controlgate to channel) the corresponding memory cells from one programmingpulse to the next, is less for memory cells to be programmed to the L1and L2 data states (e.g., data states between the lower and upper datastates) than for memory cells to be programmed to the L3 data state(e.g., the upper data state). For some embodiments, the values ofΔVpass_L1-L2 and/or ΔVpass_L2 may be chosen such that the effective gatestep for memory cells to be programmed to the L1 data state is less thanthe effective gate step for memory cells to be programmed to the L2 datastate, which is less than the effective gate step for memory cells to beprogrammed to the L3 data state. For some embodiments, the voltage level520 may be the same for a subsequent (e.g., each subsequent) programmingpulse, such that ΔVpass_L0-L1 might decrease to compensate for increasesin ΔVpass_L1-L2 and/or ΔVpass_L2. For other embodiments, ΔVpass_L0-L1may be the same for a subsequent (e.g., each subsequent) programmingpulse, such that the voltage level 520 might increase in response toincreases in ΔVpass_L1-L2 and/or ΔVpass_L2.

Table 2 provides examples for various voltage levels used in aprogramming operation of the type described with reference to FIG. 5 inaccordance with an embodiment. The example of Table 2 describes sevensuccessive and increasing programming pulses, each programming pulsereaching a program voltage that is 0.5V higher than the program voltageof a preceding (e.g., immediately preceding) programming pulse. Forprogramming pulse #1 (e.g., an initial programming pulse), voltagelevels for ΔVpass_L1-L2 and ΔVpass_L2 may be the same at 2.0V, resultingin boosted channel voltages for memory cells to be programmed to the L1,L2 and L3 data states of 4.0V, 2.0V and 0V, respectively.

For the embodiment of Table 2, subsequent values for ΔVpass_L1-L2 andΔVpass_L2 might increase relative to a preceding (e.g., immediatelypreceding) programming pulse, providing increasing magnitudes of thesesteps of the programming pulse. For example, subsequent values forΔVpass_L1-L2 and ΔVpass_L2 might increase by some particular amount,e.g., 0.1V, for each programming pulse as shown in Table 2, thusboosting the channel voltages for memory cells selected for programmingto the L1 and L2 data states by increasing amounts for each subsequentprogramming pulse of a programming operation. As a result, the effectivegate step for memory cells to be programmed to the L1 data state is 0.3Vfor each programming pulse, the effective gate step for memory cells tobe programmed to the L2 data state is 0.4V for each programming pulse,and the effective gate step for memory cells to be programmed to the L3data state is 0.5V for each programming pulse. Use of smaller effectivegate steps can facilitate tighter threshold voltage distributions, thusfacilitating improvements in RWB.

TABLE 2 Eff Eff Eff Gate Gate Gate Pulse ΔVpass ΔVpass Vch Vch Vch StepStep Step # Vpgm L1-L2 L2 L1 L2 L3 L1 L2 L3 1 17.0 2.0 2.0 4.0 2.0 0 217.5 2.1 2.1 4.2 2.1 0 0.3 0.4 0.5 3 18.0 2.2 2.2 4.4 2.2 0 0.3 0.4 0.54 18.5 2.3 2.3 4.6 2.3 0 0.3 0.4 0.5 5 19.0 2.4 2.4 4.8 2.4 0 0.3 0.40.5 6 19.5 2.5 2.5 5.0 2.5 0 0.3 0.4 0.5 7 20.0 2.6 2.6 5.2 2.6 0 0.30.4 0.5

Although subsequent values for ΔVpass_L1-L2 and ΔVpass_L2 increased bythe same amount in the example of Table 2, they could increase bydifferent amounts. In addition, one or more of these voltage levelincreases (e.g., steps) might decrease for subsequent programming pulses(e.g., each subsequent programming pulse). Through appropriate selectionof the differences of these voltage level increases for subsequentprogramming pulses, e.g., the voltage level increases ΔVpass_L1-L2 andΔVpass_L2 in the foregoing examples, the effective gate steps for eachintermediate data state can be controlled independently. For example,the effective gate step for memory cells to be programmed to the L2 datastate might be chosen to be a value less than both the effective gatestep for memory cells to be programmed to the L1 data state and theeffective gate step for memory cells to be programmed to the L3 datastate.

Table 3 provides examples for various voltage levels used in aprogramming operation of the type described with reference to FIG. 5 inaccordance with another embodiment. The example of Table 3 describesseven successive and increasing programming pulses, each programmingpulse reaching a program voltage that is 0.5V higher than the programvoltage of a preceding (e.g., immediately preceding) programming pulse.For programming pulse #1 (e.g., an initial programming pulse), voltagelevels for ΔVpass_L1-L2 and ΔVpass_L2 may be the same at 2.0V, resultingin boosted channel voltages for memory cells to be programmed to the L1,L2 and L3 data states of 4.0V, 2.0V and 0V, respectively. For theembodiment of Table 3, subsequent values for ΔVpass_L1-L2 might decreaserelative to a preceding (e.g., immediately preceding) programming pulse,providing decreasing magnitudes of this step of the programming pulses.For example, subsequent values for ΔVpass_L1-L2 might decrease by someparticular amount, e.g., 0.1V, for each programming pulse as shown inTable 3, while still boosting the channel voltages for memory cellsselected for programming to the L1 data state for each subsequentprogramming pulse of a programming operation. In addition, subsequentvalues for ΔVpass_L2 might increase relative to a preceding (e.g.,immediately preceding) programming pulse, providing increasingmagnitudes of this step of the programming pulses. For example,subsequent values for ΔVpass_L2 might increase by some particularamount, e.g., 0.2V, for each programming pulse as shown in Table 3, thusboosting the channel voltages for memory cells selected for programmingto the L1 and L2 data states by increasing amounts for each subsequentprogramming pulse of a programming operation. As a result, the effectivegate step for memory cells to be programmed to the L1 data state is 0.4Vfor each programming pulse, the effective gate step for memory cells tobe programmed to the L2 data state is 0.3V for each programming pulse,and the effective gate step for memory cells to be programmed to the L3data state is 0.5V for each programming pulse.

TABLE 3 Eff Eff Eff Gate Gate Gate Pulse ΔVpass ΔVpass Vch Vch Vch StepStep Step # Vpgm L1-L2 L2 L1 L2 L3 L1 L2 L3 1 17.0 2.0 2.0 4.0 2.0 0 217.5 1.9 2.2 4.1 2.2 0 0.4 0.3 0.5 3 18.0 1.8 2.4 4.2 2.4 0 0.4 0.3 0.54 18.5 1.7 2.6 4.3 2.6 0 0.4 0.3 0.5 5 19.0 1.6 2.8 4.4 2.8 0 0.4 0.30.5 6 19.5 1.5 3.0 4.5 3.0 0 0.4 0.3 0.5 7 20.0 1.4 3.2 4.6 3.2 0 0.40.3 0.5

The foregoing examples demonstrated the use of different (e.g.,independent) values of effective gate steps for memory cells to beprogrammed to some of the programmed data states. This can facilitateindependent control of the widths of the resulting threshold voltagedistributions corresponding to various programmed data states.Furthermore, although different values of effective gate step may beused for each programmed data state, some or all of the intermediatedata states, e.g., the L1 and L2 data states in the present example,might use the same values of effective gate step, such as shown in Table4.

Table 4 provides examples for various voltage levels used in aprogramming operation of the type described with reference to FIG. 5 inaccordance with another embodiment. The example of Table 4 describesseven successive and increasing programming pulses, each programmingpulse reaching a program voltage that is 0.5V higher than the programvoltage of a preceding (e.g., immediately preceding) programming pulse.For programming pulse #1 (e.g., an initial programming pulse), voltagelevels for ΔVpass_L1-L2 and ΔVpass_L2 may be the same at 2.0V, resultingin channel voltages for memory cells to be programmed to the L1, L2 andL3 data states of 4.0V, 2.0V and 0V, respectively. For the embodiment ofTable 4, subsequent values for ΔVpass_L2 might increase relative to apreceding (e.g., immediately preceding) programming pulse while valuesfor ΔVpass_L1-L2 might remain the same, thus boosting the channelvoltages for memory cells selected for programming to the L1 and L2 datastates for each subsequent programming pulse of a programming operation.For example, subsequent values for ΔVpass_L2 might increase by someparticular amount, e.g., 0.1V, for each programming pulse as shown inTable 3. As a result, the effective gate step for memory cells to beprogrammed to the L1 and L2 data states is 0.4V for each programmingpulse and the effective gate step for memory cells to be programmed tothe L3 data state is 0.5V for each programming pulse.

TABLE 4 Eff Eff Eff Gate Gate Gate Pulse ΔVpass ΔVpass Vch Vch Vch StepStep Step # Vpgm L1-L2 L2 L1 L2 L3 L1 L2 L3 1 17.0 2.0 2.0 4.0 2.0 0 217.5 2.0 2.1 4.1 2.1 0 0.4 0.4 0.5 3 18.0 2.0 2.2 4.2 2.2 0 0.4 0.4 0.54 18.5 2.0 2.3 4.3 2.3 0 0.4 0.4 0.5 5 19.0 2.0 2.4 4.4 2.4 0 0.4 0.40.5 6 19.5 2.0 2.5 4.5 2.5 0 0.4 0.4 0.5 7 20.0 2.0 2.6 4.6 2.6 0 0.40.4 0.5

Although example embodiments depicted voltage levels for sevensuccessive programming pulses, fewer or more programming pulses might beused. In addition, while specific values of effective gate step weredisclosed, it will be apparent that the concepts described herein can beextended to produce a variety of values for effective gate step.Similarly, while specific examples of the initial values of ΔVpass_L1-L2and ΔVpass_L2, such values will generally be responsive to the chosendefinition of target threshold voltages for various data states.Furthermore, the concepts described herein may be applied to memoryconfigured to operate with differing numbers of data states, e.g., threeor more data states.

FIG. 6 is a flowchart of a method of operating a memory (e.g.,performing a programming operation) in accordance with an embodiment. At630, a programming pulse is generated for a programming operation. Theprogramming pulse has a plurality of steps prior to a program voltagelevel of the programming pulse. As used herein, the steps occurringprior to the program voltage level do not include the step (e.g., finalstep) to the program voltage level. For example, the programming pulseof FIG. 5 is depicted to have three steps prior to making the transitionto the program voltage level at time t6, i.e., the step to voltage level516 (e.g., between time t1 and time t2, i.e., the step ΔVpass_L0-L1),the step from voltage level 516 to voltage level 518 (e.g., between timet3 and time t4, i.e., the step ΔVpass_L1-L2), and the step from voltagelevel 518 to voltage level 520 (e.g., between time t5 and time t6, i.e.,the step ΔVpass_L2). The number (e.g., integer number) of steps prior tothe program voltage level of the programming pulse might generally bedescribed as the number of data states minus one.

Each of the steps of a programming pulse prior to the program voltagelevel may be thought of as corresponding to one of the data states. Forexample, the step ΔVpass_L0-L1 may be thought of as corresponding to theL0 data state as it occurs after transition of BL unsel 502 to theinhibit voltage, the step ΔVpass_L1-L2 may be thought of ascorresponding to the L1 data state as it occurs after transition of BLL1 504 to the inhibit voltage, and the step ΔVpass_L2 may be thought ofas corresponding to the L2 data state as it occurs after transition ofBL L2 506 to the inhibit voltage.

At 632, a subsequent programming pulse is generated for the programmingoperation. The subsequent programming pulse has the plurality of steps(e.g., the same plurality of steps) prior to a program voltage level ofthe programming pulse. A particular step of the plurality of steps ofthe programming pulse has a different magnitude than a correspondingstep of the plurality of steps of the subsequent programming pulse. Forexample, with reference to FIG. 5 and Table 2, the step ΔVpass_L1-L2 forprogramming pulse #1 is 2.0V and its corresponding step ΔVpass_L1-L2 forprogramming pulse #2 is 2.1V, i.e., a different magnitude. Similarly,the step ΔVpass_L2 for programming pulse #1 is 2.0V and itscorresponding step ΔVpass_L2 for programming pulse #2 is 2.1V, i.e., adifferent magnitude. While Table 2 uses steps of different magnitude forboth steps providing for channel boost of memory cells to be programmedto the L1 and L2 data states, Table 4 shows that some steps of theprogramming pulse could have the same magnitude from programming pulseto programming pulse. For example, with reference to Table 4, the stepΔVpass_L1-L2 for programming pulse #1 is 2.0V and its corresponding stepΔVpass_L1-L2 for programming pulse #2 is 2.0V, i.e., a same magnitude,while the step ΔVpass_L2 for programming pulse #1 is 2.0V and itscorresponding step ΔVpass_L1-L2 for programming pulse #2 is 2.1V, i.e.,a different magnitude. A program verify operation may be performedbetween 630 and 632, as is understood in the art.

The method of FIG. 6 may be extended to different numbers of datastates. For some embodiments, steps of the programming pulse prior tothe program voltage level and corresponding to each data state between alower (e.g., lowest) data state and an upper (e.g., highest) data statemay each have different magnitudes than their corresponding steps of adifferent programming pulse. For example, consider a programmingoperation of an eight-level (e.g., three bits per memory cell) memorydevice having data states L0-L7, where the L0 data state corresponds toa lower (e.g., lowest) range of threshold voltages, the L7 data statecorresponds to an upper (e.g., highest) range of threshold voltages, andthe L1-L6 data states correspond to respective increasing ranges ofthreshold voltages between the range of threshold voltages for the L0data state and the range of threshold voltages for the L7 data state. Inthis example, steps of the programming pulse prior to the programvoltage level and corresponding to each of the L1-L6 data states mighteach have a different (e.g., greater or lesser) magnitude than theircorresponding steps of a different programming pulse, such that theeffective gate step for memory cells to be programmed to each of thedata states would be different.

Alternatively, less than all of the data states between the lower datastate and the upper data state might have different magnitudes thantheir corresponding steps of a different programming pulse. To continuewith the eight-level memory device example, steps corresponding to theL1, L2, L4 and L5 data states might have a same magnitude fromprogramming pulse to programming pulse, while steps corresponding to theL3 and L6 data states might have different magnitudes from programmingpulse to programming pulse. In this manner, the effective gate steps formemory cells to be programmed to the L1, L2 and L3 data states couldhave one value while the effective gate steps for memory cells to beprogrammed to the L4, L5 and L6 data states could have a different(e.g., greater or lesser) value. Other combinations can be utilized toproduce a variety of different effective gate steps.

FIG. 7 is a flowchart of a method of operating a memory (e.g.,performing a programming operation) in accordance with an embodiment. At740, a channel voltage of a memory cell selected for programming isboosted to a particular voltage level for a particular programmingpulse. Boosting the channel voltage might be performed as described withreference to FIG. 5. At 742, the channel voltage of the memory cellselected for programming is boosted to a second, greater, voltage levelfor a subsequent (e.g., immediately subsequent) programming pulse. Aprogram verify operation may be performed between 740 and 742, as isunderstood in the art. At 744, the channel voltage of the memory cellselected for programming is boosted to a third, greater, voltage levelfor a next subsequent (e.g., immediately subsequent) programming pulse.A difference between the second voltage level and the particular voltagelevel and a difference between the third voltage level and the secondvoltage level may be the same. A program verify operation may beperformed between 742 and 744, as is understood in the art.

FIG. 8 is a flowchart of a method of operating a memory (e.g.,performing a programming operation) in accordance with an embodiment. At850, a programming pulse is applied to a plurality of memory cells in aprogramming operation, establishing (i.e., intending to establish) afirst voltage level across (e.g., from control gate to channel) memorycells of the plurality of memory cells selected for programming to afirst data state (e.g., using the programming pulse) and establishing asecond voltage level across memory cells of the plurality of memorycells selected for programming to a second data state (e.g., using theprogramming pulse). The first data state may correspond to a range ofthreshold voltages less than a range of threshold voltages correspondingto the second data state. The second data state may further be an upper(e.g., highest) data state of the plurality of data states that can beprogrammed in the programming operation. At 852, a subsequentprogramming pulse is applied to the plurality of memory cells in theprogramming operation, establishing (i.e., intending to establish) athird voltage level across memory cells of the plurality of memory cellsselected for programming to the first data state (e.g., using thesubsequent programming pulse) and establishing a fourth voltage levelacross memory cells of the plurality of memory cells selected forprogramming to the second data state (e.g., using the subsequentprogramming pulse). A program verify operation may be performed between850 and 852, as is understood in the art. The memory cells selected forprogramming to the first data state and to the second data state may bethe same set of memory cells where no memory cell passed the programverify operation between 850 and 852 for the first data state or thesecond data state.

At 854, a next subsequent programming pulse is applied to the pluralityof memory cells in the programming operation, establishing (i.e.,intending to establish) a fifth voltage level across memory cells of theplurality of memory cells selected for programming to the first datastate (e.g., using the next subsequent programming pulse) andestablishing a sixth voltage level across memory cells of the pluralityof memory cells selected for programming to the second data state (e.g.,using the next subsequent programming pulse). A program verify operationmay be performed between 852 and 854, as is understood in the art. Thememory cells selected for programming to the first data state and to thesecond data state may be the same set of memory cells where no memorycell passed the program verify operation between 852 and 854 for thefirst data state or the second data state. A difference between thethird voltage level and the first voltage level and a difference betweenthe fifth voltage level and the third voltage level may be the same, anda difference between the fourth voltage level and the second voltagelevel and a difference between the sixth voltage level and the fourthvoltage level may be the same. The difference between the third voltagelevel and the first voltage level may be different than (e.g., lessthan) the difference between the fourth voltage level and the secondvoltage level. It is noted that the first data state and the second datastate of FIG. 8 may refer to two data states of three of more datastates of the programming operation.

CONCLUSION

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe embodiments will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the embodiments.

What is claimed is:
 1. A method of operating a memory, comprising:boosting a channel voltage of a memory cell selected for programming toa particular voltage level for a particular programming pulse; boostingthe channel voltage of the memory cell selected for programming to asecond voltage level, greater than the particular voltage level, for asubsequent programming pulse; and boosting the channel voltage of thememory cell selected for programming to a third voltage level, greaterthan the second voltage level, for a next subsequent programming pulse.2. The method of claim 1, wherein a difference between the secondvoltage level and the particular voltage level and a difference betweenthe third voltage level and the second voltage level are the same. 3.The method of claim 1, wherein boosting the channel voltage of thememory cell for the particular programming pulse comprises raising avoltage level of the particular programming pulse while a select gatebetween the memory cell and a data line is deactivated.
 4. The method ofclaim 1, wherein boosting the channel voltage of the memory cell for theparticular programming pulse occurs after raising the voltage level ofthe particular programming pulse while the select gate between thememory cell and the data line is activated.
 5. The method of claim 1,wherein the memory cell is a first memory cell and further comprising:boosting a channel voltage of a second memory cell selected forprogramming to a fourth voltage level for the particular programmingpulse; boosting the channel voltage of the second memory cell selectedfor programming to a fifth voltage level, greater than the fourthvoltage level, for the subsequent programming pulse; and boosting thechannel voltage of the second memory cell selected for programming to asixth voltage level, greater than the fifth voltage level, for the nextsubsequent programming pulse; wherein the sixth voltage level is greaterthan the third voltage level; and wherein the second memory cell isselected for programming to a data state corresponding to a range ofthreshold voltages less than a range of threshold voltages correspondingto a data state to which the first memory cell is selected forprogramming.
 6. The method of claim 5, wherein a difference between thefifth voltage level and the fourth voltage level and a differencebetween the sixth voltage level and the fifth voltage level are thesame.
 7. The method of claim 1, wherein a difference between the sixthvoltage level and the fifth voltage level is the same as the differencebetween the third voltage level and the second voltage level, andwherein a difference between a voltage level applied across the firstmemory cell during a program voltage level of the subsequent programmingpulse and a voltage level applied across the first memory cell during aprogram voltage level of the particular programming pulse is the same asa difference between a voltage level applied across the second memorycell during the program voltage level of the subsequent programmingpulse and the voltage level applied across the second memory cell duringthe program voltage level of the particular programming pulse.
 8. Themethod of claim 1, wherein a difference between the sixth voltage leveland the fifth voltage level is different than the difference between thethird voltage level and the second voltage level, and wherein adifference between a voltage level applied across the first memory cellduring a program voltage level of the subsequent programming pulse and avoltage level applied across the first memory cell during a programvoltage level of the particular programming pulse is different than adifference between a voltage level applied across the second memory cellduring the program voltage level of the subsequent programming pulse anda voltage level applied across the second memory cell during the programvoltage level of the particular programming pulse.
 9. The method ofclaim 1, wherein the memory cell is a memory cell connected to aparticular access line and selected for programming to a particular datastate of N defined data states each corresponding to a respective rangeof threshold voltages, wherein N is an integer value greater than two,the method further comprising: boosting a channel voltage of each memorycell connected to the particular access line that is not selected forprogramming to a data state of the N defined data states having ahighest corresponding range of threshold voltages of the N defined datastates.
 10. A method of operating a memory, comprising: boosting achannel voltage of a first memory cell selected for programming to afirst voltage level for a particular programming pulse, and boosting achannel voltage of a second memory cell selected for programming to asecond voltage level for the particular programming pulse; boosting thechannel voltage of the first memory cell selected for programming to athird voltage level, greater than the first voltage level, for asubsequent programming pulse, and boosting the channel voltage of thesecond memory cell selected for programming to a fourth voltage level,greater than the second voltage level, for the subsequent programmingpulse; and boosting the channel voltage of the first memory cellselected for programming to a fifth voltage level, greater than thethird voltage level, for a next subsequent programming pulse, andboosting the channel voltage of the second memory cell selected forprogramming to a sixth voltage level, greater than the fourth voltagelevel, for the next subsequent programming pulse; wherein the sixthvoltage level is greater than the fifth voltage level; wherein adifference between the third voltage level and the first voltage levelis the same as a difference between the fifth voltage level and thethird voltage level; wherein a difference between the fourth voltagelevel and the second voltage level is the same as a difference betweenthe sixth voltage level and the fourth voltage level; and wherein thesecond memory cell is selected for programming to a data statecorresponding to a range of threshold voltages less than a range ofthreshold voltages corresponding to a data state to which the firstmemory cell is selected for programming.
 11. The method of claim 10,wherein the difference between the third voltage level and the firstvoltage level is different than the difference between the fourthvoltage level and the second voltage level.
 12. A method of operating amemory, comprising: applying a programming pulse to a plurality ofmemory cells selected for programming in a programming operation,establishing a first voltage level across memory cells of the pluralityof memory cells selected for programming to a first data state andestablishing a second voltage level across memory cells of the pluralityof memory cells selected for programming to a second data state;applying a subsequent programming pulse to the plurality of memory cellsin the programming operation, establishing a third voltage level acrossmemory cells of the plurality of memory cells selected for programmingto the first data state and establishing a fourth voltage level acrossmemory cells of the plurality of memory cells selected for programmingto the second data state; and applying a next subsequent programmingpulse to the plurality of memory cells in the programming operation,establishing a fifth voltage level across memory cells of the pluralityof memory cells selected for programming to the first data state andestablishing a sixth voltage level across memory cells of the pluralityof memory cells selected for programming to the second data state,wherein a difference between the third voltage level and the firstvoltage level is different than a difference between the fourth voltagelevel and the second voltage level and wherein a difference between thefifth voltage level and the third voltage level is different than adifference between the sixth voltage level and the fourth voltage level.13. The method of claim 12, wherein the difference between the thirdvoltage level and the first voltage level and the difference between thefifth voltage level and the third voltage level are the same, andwherein the difference between the fourth voltage level and the secondvoltage level and the difference between the sixth voltage level and thefourth voltage level are the same.
 14. The method of claim 12, whereinestablishing a particular voltage level across memory cells of theplurality of memory cells selected for programming to a particular datastate while applying a particular programming pulse comprisesestablishing the particular voltage level across the memory cells of theplurality of memory cells selected for programming to the particulardata state during a program voltage level of the particular programmingpulse.
 15. The method of claim 12, wherein the programming operation hasN defined data states each corresponding to a respective range ofthreshold voltages, wherein N is an integer value greater than two,wherein the difference between the third voltage level and the firstvoltage level is less than the difference between the fourth voltagelevel and the second voltage level, and wherein the second data statecorresponds to a range of threshold voltages greater than a range ofthreshold voltages corresponding to the first data state.
 16. The methodof claim 12, further comprising: performing a first program verifyoperation between applying the programming pulse and applying thesubsequent programming pulse; and performing a second program verifyoperation between applying the programming pulse and applying thesubsequent programming pulse.
 17. The method of claim 12, furthercomprising: establishing a seventh voltage level across memory cells ofthe plurality of memory cells selected for programming to a third datastate while applying the programming pulse to the plurality of memorycells; establishing an eighth voltage level across memory cells of theplurality of memory cells selected for programming to the third datastate while applying the subsequent programming pulse to the pluralityof memory cells; and establishing a ninth voltage level across memorycells of the plurality of memory cells selected for programming to thethird data state while applying the next subsequent programming pulse tothe plurality of memory cells.
 18. The method of claim 17, wherein theprogramming operation has N defined data states each corresponding to arespective range of threshold voltages, wherein N is an integer valuegreater than three, wherein the difference between the third voltagelevel and the first voltage level is less than the difference betweenthe fourth voltage level and the second voltage level, and wherein thesecond data state corresponds to a range of threshold voltages greaterthan a range of threshold voltages corresponding to the first datastate.
 19. The method of claim 18, wherein the difference between theeighth voltage level and the seventh voltage level is different than thedifference between the third voltage level and the first voltage level,and wherein the range of threshold voltages corresponding to the firstdata state and the range of threshold voltages corresponding to thesecond data state are each different than a range of threshold voltagescorresponding to the third data state.
 20. The method of claim 18,wherein the difference between the eighth voltage level and the seventhvoltage level is the same as the difference between the third voltagelevel and the first voltage level, and wherein the range of thresholdvoltages corresponding to the first data state and the range ofthreshold voltages corresponding to the second data state are eachdifferent than a range of threshold voltages corresponding to the thirddata state.